Talk:Deep reactive-ion etching
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What is the difference between RIE and DRIE? Is it possible the aspect ratio (AR). Eg. AR<2 is RIE, while AR>2 is DRIE?
The DRIE descibed here is the pulsed DRIE, switching between etching and passivating. It does also exist a continuous DRIE, the cryogenic DRIE with a SF6+O2 mixture at cryogenic temperatures.
Best regards Preben Storas Preben.Storas@sintef.no
The gas SF6 by itself is actually not highly reactive. Quite the contrary. Peter Lund/82.143.195.87 06:10, 19 December 2006 (UTC)
What would have been interesting, is a discussion of the advantages and disadvantages of deep reactive-ion etching in it's applications in addition to the given techniques. 85.89.9.166
Bosch Process[edit]
I am fairly certain that the term "Bosch Process" refers specifically to silicon etching (i.e. SF6/C4F8), rather than the more general idea of switching chemistries. Other switched chemistry processes (like the O2/C4F8 for polymers mentioned in the article now) are typically referred to as "Bosch-inspired" or something like that. The reason for this is simply that the process was originally developed for silicon etching. If anybody has any thoughts on this, I'd be glad to hear. I think that the Bosch Process (which currently redirects here) has enough historical value to warrant its own page... I am working on putting something together now. If anybody would like to help, let me know. Lone Skeptic (talk) 03:29, 7 August 2008 (UTC)