File:EEROM CELL for 2816 SEEQ.jpg

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EEROM_CELL_for_2816_SEEQ.jpg(320 × 222 pixels, file size: 18 KB, MIME type: image/jpeg)

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English: First ever EEROM CELL design utilizing Tunneling over a thin oxide region for both program and erase and a cell architecture to develop the first ever EEPROM device the 2816 with 100k endurance and the ability to program and erase 8 bit words like a real memory. The Intel 2816 was the first memory device to pave the way in the up and coming Flash revolution.
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Source Own work
Author Frbrown

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5 June 2020

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current22:40, 5 June 2020Thumbnail for version as of 22:40, 5 June 2020320 × 222 (18 KB)FrbrownCross-wiki upload from en.wikipedia.org
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